Силовой модуль IGBT SEMIX252GB126HDS

8228,00 

Описание

IGBT MODULE, 2X1200V; Transistor Type:IGBT Module; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current, Ic Continuous a Max:270A; Voltage, Vce Sat Max:2.15V; Case Style:SEMiX 2s; Termination Type:Screw; Current, Ic av:270A; Current, Icm Pulsed:400A; Current, Ifs Max:1000A; Time, Rise:45ns; Voltage, Vceo:1.2V; Voltage, Vrrm:1200V