Силовой модуль IGBT SKM50GB123D

IGBT MODULE, DUAL
Transistor Type IGBT Module
Transistor Polarity N Channel
Voltage, Vces 1200V
Current Ic Continuous a Max 50A
Voltage, Vce Sat Max 2.8V
Power Dissipation 310W
Case Style SEMITRANS 2
Termination Type Screw
Collector-to-Emitter Breakdown Voltage 1200V
Current Ic Continuous b Max 40A
Current Ic av 50A
Current, Icm Pulsed 100A
External Depth 34mm
External Length / Height 29.5mm
Fixing Centres 80mm
Fixing Hole Diameter 6.4mm
Power, Pd 400W
Power, Ptot 400W
Temperature, Current 25 C
Time, Rise 60ns
Transistors, No. of 2
Width, External 94mm